Semiconductor device having pad structure with stress buffer layer
US8283781B2 · kind B2 · utility
25Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.