Semiconductor device
US8283787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Nov 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01322
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a through-silicon-via arranged to couple a plurality of stacked semiconductor chips, an interconnection line coupled to the through-silicon-via at one side and arranged to couple the through-silicon-via to the semiconductor chip, an internal interconnection line disposed at the other side of the interconnection line and intersected with the interconnection line, and at least one first contact disposed to couple the internal interconnection line to the interconnection line. A region of the interconnection line in which the internal interconnection line is disposed is equally divided, and an area between the divided regions is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.