Voltage compensated tracking circuit in SRAM
US8284626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Dec 31, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/413
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Supply voltage compensated tracking circuit in a split-rail static random access memory (SRAM). The circuit includes a tracking circuit for tracking a delay required for generating sense amplifier enable (SE) signal in a memory. The tracking circuit receives an array supply voltage (VDDAR) and a periphery supply voltage (VDDPR). Further, the circuit includes a discharge control circuit, operatively coupled to the tracking circuit, for increasing delay in activating a first transistor of the tracking circuit when VDDAR is higher than VDDPR; and a contention circuit including an output coupled to the first transistor, for delaying a discharge path activation through the first transistor when VDDAR is lower than the VDDPR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.