Patent · US Active

3-dimensional device design layout

US8286114B2 · kind B2 · utility

11Cited by
17References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 2, 2007
Grant dateOct 9, 2012
Priority date
Expiry dateNov 6, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/024
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for defining a layout of 3-D devices, such as a finFET, is provided. The method includes determining an area required by a desired 3-D device and designing a circuit using planar devices having an equivalent area. The planar device corresponding to the desired 3-D device is used to layout a circuit design, thereby allowing circuit and layout designers to work at a higher level without the need to specify each individual fin or 3-D structure. Thereafter, the planar design may be converted to a 3-D design by replacing planar active areas with 3-D devices occupying an equivalent area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.