Method of processing silicon substrate and method of manufacturing substrate for liquid discharge head
US8287747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2010 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Nov 30, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2/1631
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of processing a substrate includes the steps of providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, opposite to the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.