Semiconductor devices and methods of fabricating the same
US8288228B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2011 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | May 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
Semiconductor devices and a methods of fabricating the semiconductor devices are provided. The methods may include forming a pattern on a substrate, forming a capping dielectric layer on the pattern, and thermally processing the substrate. After thermally processing the substrate, the methods may further include forming a diffusion barrier layer by a nitride process that may include supplying nitrogen to the capping dielectric layer. The methods may also include forming an etching stop layer on the diffusion barrier layer, forming an inter-layer dielectric layer on the etching stop layer, and planarizing the inter-layer dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.