Joon-Sung Lim
72Patents
7h-index
55Co-inventors
71Inventor score
Filing activity: Jun 5, 2008 → Aug 4, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9741733B2 | Three-dimensional semiconductor memory devices | Electricity | 33 | Active |
| US9548316B2 | Semiconductor device | Electricity | 16 | Active |
| US10115667B2 | Semiconductor device with an interconnection structure having interconnections with an interconnection density that decreases moving away from a cell semiconductor pattern | Electricity | 16 | Active |
| US9786676B2 | Vertical memory devices and methods of manufacturing the same | Electricity | 13 | Active |
| US9887199B2 | Semiconductor devices including a peripheral circuit region and first and second memory regions, and related programming methods | Physics | 12 | Active |
| US10038009B2 | Three-dimensional semiconductor memory devices | Electricity | 10 | Active |
| US9679659B2 | Methods of operating a nonvolatile memory device | Physics | 10 | Active |
| US10403634B2 | Semiconductor memory device and method of manufacturing the same | Electricity | 7 | Active |
| US9728549B2 | Semiconductor devices and methods for forming the same | Electricity | 6 | Active |
| US9853045B2 | Semiconductor device having channel holes | Electricity | 5 | Active |
| US10727244B2 | Semiconductor memory devices and methods of fabricating the same | Electricity | 5 | Active |
| US10804363B2 | Three-dimensional semiconductor memory device and method of fabricating the same | Electricity | 4 | Active |
| US10818678B2 | Three-dimensional semiconductor memory device and method of fabricating the same | Electricity | 4 | Active |
| US9698154B2 | Semiconductor device | Electricity | 4 | Active |
| US10796991B2 | Semiconductor device | Electricity | 4 | Active |
| US10692881B2 | Semiconductor memory device and method of manufacturing the same | Electricity | 3 | Active |
| US10332900B2 | Vertical memory devices | Electricity | 2 | Active |
| US11289504B2 | Three-dimensional semiconductor memory device and method of fabricating the same | Electricity | 2 | Active |
| US11088157B2 | Three-dimensional semiconductor device having stepped gate electrodes | Electricity | 2 | Active |
| US9461058B2 | Methods of fabricating semiconductor devices including multiple patterning | Electricity | 2 | Active |
| US10700085B2 | Vertical memory devices | Electricity | 2 | Active |
| US10797068B2 | Semiconductor devices | Electricity | 2 | Active |
| US11792982B2 | Three-dimensional semiconductor memory device and method of fabricating the same | Electricity | 2 | Active |
| US9330931B2 | Method of manufacturing semiconductor device | Electricity | 2 | Active |
| US10566342B2 | Semiconductor memory devices including a stress relief region | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.