Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film
US8288234B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2010 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Feb 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10−1 A/cm2 or less, (3) suppress hysteresis caused by the generation of fixed charges, and (4) prevent an increase in EOT even if heat treatment at 700° C. or more is performed and obtain excellent heat resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.