Field effect transistor having nanostructure channel
US8288236B2 · kind B2 · utility
7Cited by
15References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2012 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A field effect transistor (FET) includes a drain formed of a first material, a source formed of the first material, a channel formed by a nanostructure coupling the source to the drain, and a gate formed between the source and the drain and surrounding the nanostructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.