Patent · US Active

Method for fabricating through substrate microchannels

US8288243B2 · kind B2 · utility

3Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 15, 2010
Grant dateOct 16, 2012
Priority date
Expiry dateNov 10, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of forming large microchannels in an integrated circuit by etching an enclosed trench into the substrate and later thinning the backside to expose the bottom of the trenches and to remove the material enclosed by the trench to form the large microchannels. A method of simultaneously forming large and small microchannels. A method of forming structures on the backside of the substrate around a microchannel to mate with another device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.