Method of fabricating semiconductor device
US8288289B2 · kind B2 · utility
5Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2011 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Jan 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.