Composition and method for photoresist removal
US8288330B2 · kind B2 · utility
0Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2007 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Mar 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65° C. and in contact times under three minutes, allowing high throughput on single wafer tools.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.