Semiconductor device

US8288796B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventors

• Nobuyuki Ito · Kashiwa, JP
• John Twynam · Regensburg, DE

Key dates

• Filing date: May 21, 2010
• Grant date: Oct 16, 2012
• Expiry date: Oct 16, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

One embodiment of a semiconductor device according to the present invention includes a substrate, a base compound semiconductor layer layered on the substrate to form a base, a channel defining compound semiconductor layer layered on the base compound semiconductor layer to define a channel, and an impact ionization control layer that is layered within a layering range of the base compound semiconductor layer and controls the location of impact ionization, wherein the base compound semiconductor layer is formed of a first compound semiconductor, the channel defining compound semiconductor layer is formed of a second compound semiconductor, and the impact ionization control layer is formed of a third compound semiconductor that has a smaller band gap than the first compound semiconductor.