Step doping in extensions of III-V family semiconductor devices

US8288798B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

• Matthias Passlack · Overijse, BE

Key dates

• Filing date: Jan 19, 2011
• Grant date: Oct 16, 2012
• Expiry date: Jan 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/86

Abstract

The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a buffer layer over a substrate, the buffer layer containing a first compound semiconductor that includes elements from one of: III-V families of a periodic table; and II-VI families of the periodic table. The method includes forming a channel layer over the buffer layer. The channel layer contains a second compound semiconductor that includes elements from the III-V families of the periodic table. The method includes forming a gate over the channel layer. The method includes depositing impurities on regions of the channel layer on either side of the gate. The method includes performing an annealing process to activate the impurities in the channel layer.