Patent · US Active

Double-gate transistor structure equipped with a multi-branch channel

US8288823B2 · kind B2 · utility

5Cited by

12References

12Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Thomas Ernst · Morette, FR
Cecilia Dupre · Grenoble, FR

Key dates

Filing date	Sep 26, 2008
Grant date	Oct 16, 2012
Priority date	—
Expiry date	Oct 25, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/121
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Double gate transistor microelectronic device comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.