Active strap magnetic random access memory cells configured to perform thermally-assisted writing
US8289765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2010 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Feb 26, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) cell with a thermally assisted writing procedure comprising a magnetic tunnel junction formed from a magnetic storage layer, a reference layer, and an insulating layer inserted between the reference layer and the storage layer; and a first strap portion laterally connecting one end of the magnetic tunnel junction to a first selection transistor; wherein the cell further comprises a second strap portion extending opposite to the first strap portion and connecting laterally said one end of the magnetic tunnel junction to a second selection transistor, and in that said first and second strap portions being adapted for passing a portion of current via the first and second selection transistors. The disclosed cell has lower power consumption than conventional MRAM cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.