Patent · US Active

Hybrid integrated circuit device

US8293547B2 · kind B2 · utility

3Cited by

20References

14Claims

0Family size

Assignee

XILINX, INC. · US

Inventors

James Karp · Saratoga, US
Steven P. Young · Boulder, US
Bernard J. New · Los Gatos, US
Scott S. Nance · Grass Valley, US
Patrick J. Crotty · San Jose, US

Key dates

Filing date	Mar 2, 2011
Grant date	Oct 23, 2012
Priority date	—
Expiry date	Mar 29, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/37001
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An embodiment of a method to form a hybrid integrated circuit device is described. This embodiment of the method comprises: forming a first die using a first lithography, where the first die is on a substrate; and forming a second die using a second lithography, where the second die is on the first die. The first lithography used to form the first die is a larger lithography than the second lithography used to form the second die. The first die is an IO die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.