Method for releasing a thin-film substrate
US8293558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Mar 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.