Manufacturing method of semiconductor device
US8293575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Apr 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The reliability of a semiconductor device is improved. A sealing resin (sealed body) is formed between a sub-substrate (first base member) and a base substrate (second base member) that are provided individually and distinctly to be integrated therewith, and then, the sub-substrate is electrically coupled to the second base member. As a means for electrically coupling the sub-substrate to the base substrate, lands (first lands) formed on the sub-substrate and lands (second lands) formed on the base substrate are disposed such that the respective positions thereof are aligned. After through holes are formed from the lands of the sub-substrate toward the lands of the base substrate, a solder member (conductive member) is formed in each of the through holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.