Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
US8293623B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Sep 12, 2008 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Aug 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02576
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.