Patent · US Active

Conductive connection structure with stress reduction arrangement for a semiconductor device, and related fabrication method

US8293636B2 · kind B2 · utility

2Cited by

3References

4Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Thomas Schulze · Rudolstadt, DE
Frank Kuechenmeister · Dresden, DE
Michael Z. Su · Round Rock, US
Lei Fu · Beijing, CN

Key dates

Filing date	Aug 24, 2010
Grant date	Oct 23, 2012
Priority date	—
Expiry date	Nov 13, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device disclosed herein includes a conductive connection structure having a stepped profile that serves as a stress relief feature. The conductive connection structure includes a stress buffer arrangement for a contact pad. The stress buffer arrangement has a stepped via that terminates at the contact pad, and the stepped via has a plurality of inwardly sloped and concentric sections in a stacked orientation. The connection structure also includes underbump metallization overlying at least a portion of the contact pad and lining the stepped via, and a conductive connection element coupled to the underbump metallization. The conductive connection element fills the lined recess.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.