Image sensor having supplemental capacitive coupling node
US8294077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Jul 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.