Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor
US8294158B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Jun 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.