Integrated circuit device and method for its production

US8294206B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Armin Willmeroth · Friedberg, DE
• Winfried Kaindl · Unterhaching, DE
• Carolin Tolksdorf · Ebersberg, DE
• Michael Rueb · Faak am See, AT

Key dates

• Filing date: Jun 15, 2011
• Grant date: Oct 23, 2012
• Expiry date: Jun 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.