Low voltage power supply
US8294215B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | May 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention provides a structure for low-voltage power supply in high-voltage devices or IC's made on a semiconductor substrate of a first conductivity type. The structure comprises a heavily doped semiconductor region of the first conductivity type between, but not contacted with, two semiconductor regions of the second conductivity type. When the two semiconductor regions of the second conductivity type have reverse-biased voltage with respect to substrate, the depletion region of substrate reaches the heavily doped semiconductor region of the first conductivity type, the heavily doped semiconductor region of the first conductivity type constructs a terminal of low-voltage power supply and any one of the semiconductor region of the second conductivity type constructs another terminal. The heavily doped semiconductor region is used as one terminal of a primary low-voltage power supply and any other region is used as another terminal of it. Thus, the cost of a low-voltage power supply can be reduced and the electrical performances be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.