Metal gate structure and method of manufacturing same
US8294223B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Dec 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a metal gate structure includes providing a substrate (110) having formed thereon a gate dielectric (120), a work function metal (130) adjacent to the gate dielectric, and a gate metal (140) adjacent to the work function metal; selectively forming a sacrificial capping layer (310) centered over the gate metal; forming an electrically insulating layer (161) over the sacrificial capping layer such that the electrically insulating layer at least partially surrounds the sacrificial capping layer; selectively removing the sacrificial capping layer in order to form a trench (410) aligned to the gate metal in the electrically insulating layer; and filling the trench with an electrically insulating material in order to form an electrically insulating cap (150) centered on the gate metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.