Inventor · Beaverton, OR, US

Willy Rachmady

361Patents
18h-index
158Co-inventors
85Inventor score

Filing activity: Jun 30, 2005 → Jan 22, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8753942B2 Silicon and silicon germanium nanowire structures Electricity 131 Active
US7494858B2 Transistor with improved tip profile and method of manufacture thereof Electricity 92 Expired
US9129829B2 Silicon and silicon germanium nanowire structures Electricity 58 Active
US9123567B2 CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture Electricity 57 Active
US8987794B2 Non-planar gate all-around device and method of fabrication thereof Electricity 54 Active
US8901537B2 Transistors with high concentration of boron doped germanium Electricity 47 Active
US7838373B2 Replacement spacers for MOSFET fringe capacitance reduction and processes of making same Electricity 44 Active
US7851790B2 Isolated Germanium nanowire on Silicon fin Electricity 37 Active
US8283653B2 Non-planar germanium quantum well devices Electricity 36 Active
US8765563B2 Trench confined epitaxially grown device layer(s) Electricity 34 Active
US9484447B2 Integration methods to fabricate internal spacers for nanowire devices Performing Operations; Transporting 30 Active
US7875519B2 Metal gate structure and method of manufacturing same Electricity 30 Active
US7821044B2 Transistor with improved tip profile and method of manufacture thereof Electricity 30 Active
US8748940B1 Semiconductor devices with germanium-rich active layers and doped transition layers Emerging Cross-Sectional Technologies 28 Active
US7435683B2 Apparatus and method for selectively recessing spacers on multi-gate devices Emerging Cross-Sectional Technologies 20 Active
US8575596B2 Non-planar germanium quantum well devices Electricity 20 Active
US9123790B2 Contact techniques and configurations for reducing parasitic resistance in nanowire transistors Emerging Cross-Sectional Technologies 20 Active
US8441074B2 Substrate fins with different heights Electricity 20 Active
US8193641B2 Recessed workfunction metal in CMOS transistor gates Electricity 18 Active
US9252275B2 Non-planar gate all-around device and method of fabrication thereof Electricity 18 Active
US7560358B1 Method of preparing active silicon regions for CMOS or other devices Electricity 17 Active
US8575653B2 Non-planar quantum well device having interfacial layer and method of forming same Electricity 17 Active
US8264048B2 Multi-gate device having a T-shaped gate structure Electricity 17 Active
US7915642B2 Apparatus and methods for forming a modulation doped non-planar transistor Electricity 14 Active
US9590089B2 Variable gate width for gate all-around transistors Emerging Cross-Sectional Technologies 14 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.