Power amplifier having depletion mode high electron mobility transistor
US8294521B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Aug 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/222
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.