Channel precharge and program methods of a nonvolatile memory device
US8295097B2 · kind B2 · utility
4Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Jun 7, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A channel pre-charge method of a nonvolatile memory device including a cell string includes pre-charging a channel of the cell string according to a first word line bias condition and pre-charging the channel of the cell string according to a second word line bias condition, different than the first word line bias condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.