Semiconductor device with thermal fault detection
US8296093B2 · kind B2 · utility
2Cited by
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23Claims
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Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Jan 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.