Patent · US Active

Evaluating the quality of an assist feature placement based on a focus-sensitive cost-covariance field

US8296688B2 · kind B2 · utility

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15References
19Claims
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Key dates

Filing dateApr 26, 2011
Grant dateOct 23, 2012
Priority date
Expiry dateApr 26, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70641
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.