Capacitive CVD reactor and methods for plasma CVD process
US8297225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.