Exposure method and method of making a semiconductor device
US8298732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2011 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31761
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure method includes generating a reticle exposure pattern based on a target pattern, performing a lithography simulation based on the reticle exposure pattern to generate a simulation pattern that simulates a resist pattern formed by reticle exposure, generating differential data between the target pattern and the simulation pattern, generating a first electron-beam exposure pattern based on the differential data, generating a reticle based on the reticle exposure pattern, performing an optical exposure process with respect to a resist by use of the reticle, and performing an electron-beam exposure process with respect to the resist based on the first electron-beam exposure pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.