High mobility monolithic p-i-n diodes
US8298887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Jun 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.