Patent · US Active

Formation of a super steep retrograde channel

US8298896B2 · kind B2 · utility

1Cited by

11References

20Claims

0Family size

Inventors

James B. Burr · Foster City, US
Archisman Bagchi · San Jose, US
Jawad Nasrullah · Stanford, US

Key dates

Filing date	Aug 22, 2011
Grant date	Oct 30, 2012
Priority date	—
Expiry date	Aug 22, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/371
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Systems and methods for raised source/drain with super steep retrograde channel are described. In accordance with a first embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.