Mechanisms for forming ultra shallow junction
US8298925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments of methods and structures are for doping fin structures by plasma doping processes to enable formation of shallow lightly doped source and drain (LDD) regions. The methods involve a two-step plasma doping process. The first step plasma process uses a heavy carrier gas, such as a carrier gas with an atomic weight equal to or greater than about 20 amu, to make the surfaces of fin structures amorphous and to reduce the dependence of doping rate on crystalline orientation. The second step plasma process uses a lighter carrier gas, which is lighter than the carrier gas for the first step plasma process, to drive the dopants deeper into the fin structures. The two-step plasma doping process produces uniform dopant profile beneath the outer surfaces of the fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.