Organic line width roughness with H2 plasma treatment
US8298958B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2008 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing very low frequency line width roughness (LWR) in forming etched features in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is treated to reduce very low frequency line width roughness of the patterned organic mask, comprising flowing a treatment gas comprising H2, wherein the treatment gas has a flow rate and H2 has a flow rate that is at least 50% of the flow rate of the treatment gas, forming a plasma from the treatment gas, and stopping the flow of the treatment gas. The etch layer is etched through the treated patterned organic mask with the reduced very low LWR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.