Patent · US Active

Volatile precursors for deposition of C-linked SiCOH dielectrics

US8298965B2 · kind B2 · utility

2Cited by
24References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 3, 2009
Grant dateOct 30, 2012
Priority date—
Expiry dateOct 23, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02274
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Disclosed herein are precursors and methods for their use in the manufacture of semiconductor, photovoltaic, TFT-LCD, or flat panel type devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.