Non-volatile memory device including phase-change material
US8299450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Jan 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.