Test structure for charged particle beam inspection and method for defect determination using the same
US8299463B2 · kind B2 · utility
63Cited by
10References
29Claims
0Family size
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Key dates
| Filing date | Sep 24, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Jun 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A test structure and method thereof for determining a defect in a sample of semiconductor device includes at least one transistor rendered grounded. The grounded transistor is preferably located at least one end of a test pattern designed to be included in the sample. When the test structure is inspected by charged particle beam inspection, the voltage contrast (VC) of the transistors in the test pattern including the grounded transistor is observed for determination of the presence of defect in the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.