Semiconductor device having semiconductor substrate including diode region and IGBT region
US8299496B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed. A separation region formed of a p-type semiconductor is formed in a range between the diode region and the IGBT region and extending from an upper surface of the semiconductor substrate to a position deeper than both a lower end of an anode region and a lower end of a body region. A diode lifetime control region is formed within a diode drift region. A carrier lifetime in the diode lifetime control region is shorter than that in the diode drift region outside the diode lifetime control region. An end of the diode lifetime control region on an IGBT region side is located right below the separation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.