Patent · US Active

Integration of MEMS and CMOS devices on a chip

US8299506B2 · kind B2 · utility

0Cited by
0References
12Claims
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Assignee

Inventors

Key dates

Filing dateDec 1, 2009
Grant dateOct 30, 2012
Priority date
Expiry dateDec 17, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/00
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.