Integration of MEMS and CMOS devices on a chip
US8299506B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Dec 1, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.