Semiconductor optoelectronic structure
US8299555B2 · kind B2 · utility
11Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 24, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/428
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.