Efuse containing sige stack

US8299570B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Deok-kee Kim · Mount Kisco, US
• Dureseti Chidambarrao · Weston, US
• William K. Henson · Beacon, US
• Chandrasekharan Kothandaraman · New York, US

Key dates

• Filing date: Jul 22, 2011
• Grant date: Oct 30, 2012
• Expiry date: Jul 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An eFuse, includes: a substrate and an insulating layer disposed on the substrate; a first layer including a single crystal or polycrystalline silicon disposed on the insulating layer; a second layer including a single crystal or polycrystalline silicon germanium disposed on the first layer, and a third layer including a silicide disposed on the second layer. The Ge has a final concentration in a range of approximately five percent to approximately twenty-five percent.