Passivation layer extension to chip edge
US8299581B2 · kind B2 · utility
3Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Jan 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide a semiconductor chip having a passivation layer extending along a surface of a semiconductor substrate to an edge of the semiconductor substrate, and methods for their formation. One aspect of the invention provides a semiconductor chip comprising: a semiconductor substrate; a passivation layer including a photosensitive polyimide disposed along a surface of the semiconductor substrate and extending to at least one edge of the semiconductor substrate; and a channel extending through the passivation layer to the surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.