High pressure apparatus and method for nitride crystal growth
US8303710B2 · kind B2 · utility
63Cited by
55References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2009 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Jul 14, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.