Substrate processing apparatus, method for manufacturing semiconductor device, and process tube
US8303712B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68792
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.