Chemical vapor deposition flow inlet elements and methods
US8303713B2 · kind B2 · utility
18Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2009 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.