Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US8304148B2 · kind B2 · utility
15Cited by
14References
25Claims
0Family size
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Key dates
| Filing date | Dec 12, 2011 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Dec 12, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fracturing or mask data preparation or proximity effect correction of a pattern to be formed on a surface is disclosed in which a plurality of variable shaped beam (VSB) shots are determined, and in which charged particle beam simulation is used to calculate the pattern which the plurality of VSB shots will form on the surface. At least two shots in the plurality of VSB shots overlap each other. In some embodiments, assigned dosages of at least two shots differ before proximity effect correction (PEC). In other embodiments an optimization technique may be used embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.