Germanium photodetector

US8304272B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Solomon Assefa · Ossining, US
• Jeehwan Kim · White Plains, US
• Jin Hong Park · Seoul, KR
• Yurii A. Vlasov · Katonah, US

Key dates

• Filing date: Feb 10, 2011
• Grant date: Nov 6, 2012
• Expiry date: Feb 10, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.